Metalsemiconductor contacts monographs in electrical and electronic engineering rhoderick, e. The authors present the state of the art in growing, processing, and characterizing electronic junctions. Metalinsulatorsemiconductor mis photoelectrodes offer a simple alternative to the traditional semiconductorliquid junction and the conventional pn junction electrode. General considerations for improving photovoltage in metal. A similar rectifying device can also be made from the junction of a ptype semiconductor with a metal. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Metalsemiconductor contacts are an obvious component of any semiconductor device. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern semiconductor technology. Selfaligned via and trench for metal contact in iiiv. A fundamental study of advanced metalsemiconductor contacts. The general structure is a lightly doped ptype substrate, into which two regions, the source and the drain, both of heavily doped ntype semiconductor have been embedded. Highly efficient mis photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Doitpoms tlp library introduction to semiconductors. This second edition brings a greatly expanded treatment of th.
Metalsilicon junctions are crucial to the operation of semiconductor devices. Rhoderick, metalsemiconductor contacts, oxford university press, 1978. They can behave either as a schottky barrier or as an ohmic contact dependent on the characteristics of the interface. Metalsemiconductor contacts 1988 edition open library. Selfaligned via and trench for metal contact in iiiv semiconductor devices jun fei zhenga intel corporation, santa clara, california 95052. Schematic band diagrams at metalsemiconductor contacts without interface states. Herein, we investigate and analyze the effect of interfacial oxides and. On the role of the interface charge in nonideal metalsemiconductor contacts on the role of the interface charge in nonideal metalsemiconductor contacts korosak, dean. A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext. In solidstate physics, a metalsemiconductor ms junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. Analysis of the series resistance and interface state. A method for the determination of barrier heights from the. We show that an atomically precise junction between a twodimensional semiconductor and a metallic contact can lead to a semiconductortometal transition in the twodimensional materiala finding which points the way to a possible method of achieving lowresistance junctions.
Current begins to flow from the semiconductor to the metal. Semiconductor device and material characterization dr. Overall, they have assembled a broad array of the latest semiconductor interface science and technology, ranging from advanced ohmic, schottky, and heterojunction contacts to the refined perspectives of microscopic junctions gleaned from ultrahigh vacuum surface science techniques. Rhoderick, metalsemiconductor contacts, clarendon press, oxford 1978. A new type of nonalloyed ohmic contact to gaas is realized by molecular beam epitaxy. Effects of thermal annealing of pt schottky contacts on n. Schottky contacts using conducting probe atomic force microscopy cafm. Unlimited viewing of the articlechapter pdf and any associated supplements and figures. Indeed, the ancient greeks put this hypothesis forward over two millennia ago. Everyday low prices and free delivery on eligible orders. Download citation metalsemiconductor contacts in this chapter, the basic device physics, the electrical and transport properties, and the formation and.
A method for treating a surface on an sic semiconductor body produced by epitaxy. Metaltosemiconductor ms junctions are of great importance since they are present in every semiconductor device. Ms junctions can either be rectifying or nonrectifying. Metalsemiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 3. Metalsemiconductor contacts monographs in electrical and. Use features like bookmarks, note taking and highlighting while reading metal semiconductor contacts and devices issn. Basic semiconductor material science and solidstate physics all terrestrial materials are made up of atoms. Metal semiconductor contacts and devices issn kindle edition by cohen, simon s. Metalsemiconductor schottky barrier junctions and their.
Metalgermanium contacts and germanide formation volume 47 e. It is well known that the quality of metalsemiconductor contacts plays an important role in the. Method for processing a surface of an sic semiconductor. This can be represented schematically in a manner similar to that shown above for the ntype semiconductor metal case. Alan doolittle school of electrical and computer engineering. In a metalsemiconductor junction under bias, is there current. The electrical properties of consi metalsemiconductor ms schottky. On the role of the interface charge in nonideal metal. In schottky barrier diodes, appreciable concentrations of deep levels in the space charge region influence high frequency capacitance. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern. Fb fbp is the barrier against the hole flow between metal and sc. The rectifying metalsemiconductor junction forms a schottky barrier, making a device known as a schottky diode, while. Pdf zno schottky barriers and ohmic contacts researchgate. Metallic contact between mos2 and ni via au nanoglue cover page pdf available in small 1422 may 2018 with 152 reads.
The presentday semiconductor technology would be inconceivable without extensive use of schottky barrier junctions. Download fundamentals of modern vlsi devices, yuan taur. In particular, a large mismatch between the fermi energy of the metal and semiconductor can result is a highresistance rectifying contact. The metal oxide semiconductor field effect transistor mosfet is one of the cornerstones of modern semiconductor technology. Metalsemiconductor ohmic contacts stanford university. Ee311 saraswat ohmic contacts 5 for a tunneling contact the net semiconductor to metal current is given by jsm at k. A mechanism of carriers transport through metalsemiconductor interface created by nickel or titaniumbased ohmic contacts on siface ntype 4hsic is presented herein. The band diagram of an ideal metal on ntype semiconductor schottky barrier is shown in figs. Metalsemiconductor contacts display a range of electrical characteristics from strongly rectifying to ohmic, each having its own applications. Metalsemiconductor contacts monographs in electrical and electronic engineering. Fmde 6 where fs and fm are fermidirac distribution functions in metal and semiconductor. As with all of these lecture slides, i am indebted to dr. Department of electronics engineering, national chiao tung university, hsinchu, taiwan.
Lau skip to main content we use cookies to distinguish you from other users and to provide you with a better experience on our websites. Rhoderick, 9780198593362, available at book depository with free delivery worldwide. Metal semiconductor contacts and devices issn, cohen. Barrier height ohmic contact schottky barrier schottky diode schottky contact. Metalsemiconductor contacts fermi level pinning is the lack of barrier height modulation with metal work function due to either large density of intrinsic states. Ideal metalsemiconductor contacts but the point of adding contacts was to apply fields, lets look at this m s metal semiconductor ntype apply positive bias, v v e v e c e i e fs current e fm this lowers e fm below e fs and reduces the barrier seen by electrons. The effect of interface states on the barrier heights of metalsemiconductor contacts was first analyzed by cowley and sze 33. Mechanisms of carriers transport in ninsic, tinsic. Europium silicide a prospective material for contacts.
A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with pn. A schottky barrier is similar to a pn junction or heterojunction in which the doping on one side increases to the point where it becomes metallic. Metal semiconductor contact anchit biswas techno india,saltlake 2. This process yields a pristine semiconductor surface for metal contacts and fully utilizes the contact area available on the device top, no matter. In this paper, we report the experimental results of thermal. Electronic contribution in heat transfer at metalsemiconductor and metal silicidesemiconductor interfaces. Metalsemiconductor interfaces rectifying schottky junction nonrectifying ohmic contacts 4. It is well known that the quality of metalsemiconductor contacts plays an important role in the performance of various. Sorry, we are unable to provide the full text but you may find it at the following locations.
Friend, cavendish laboratory, madingley road, cambridge c b 3 0 h e, u. For example, a schottky diode can be used to study bulk defects and interface properties of a metalsemiconductor system. Rhoderick, 1988, clarendon press, oxford university press edition, in english 2nd ed. Measurement of barrier potiential fb and working of schottky contacts 2 november 2015 7 n type sc n type sc under thermal equlibrium under reverse bias 8. Metalgermanium contacts and germanide formation mrs. At the same time, such contacts cannot be assumed to have a resistance as low as that of two connected metals. Lowresistance ohmic contacts are a challenge for electronic devices based on twodimensional materials. Werner, in metallization and metalsemiconductor interfaces, edited by i. However, it was not until the twentieth century that the atomic theory of matter became firmly established as an unassailable, demonstrated fact. In addition to different device and circuit applications, schottky contacts can also be used as test vehicles for investigating the physical and electrical properties of a semiconductor material and its surfaces.
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